Supercritical fluid electrodeposition, structural and electrical characterisation of tellurium nanowires
Supercritical fluid electrodeposition, structural and electrical characterisation of tellurium nanowires
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DOI：
10.1039/c7ra07092f
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发表时间：
2017-01-01
期刊：
影响因子：
3.9
通讯作者：
Webber, Zondy
中科院分区：
文献类型：
--
作者：
Bartlett, Philip N.;Cook, David A.;Webber, Zondy
采用超临界流体电沉积（SCFED）快速沉积（2.5 μ m min（-1））的碲纳米线（TeNW）的标称尺寸范围为13 nm至55 nm的直径和几十微米的长度。阳极氧化铝（AAO）膜被用作硬模板，用于通过将铂或金蒸发到一面上以形成电极的电沉积。TeNW的特点是在原位和AAO模板去除后，通过XRD，拉曼光谱和电子显微镜。在所有情况下，纳米线都是具有强择优取向的晶体。对于< 001 >使用铂涂覆的膜生产的样品，总是观察到典型的生长方向;然而对于金涂覆的膜，碲（IV）前体和金之间的化学反应导致非典型< 110 >生长。晶体管器件由单独的TeNWs和它们的电性能的特点。
Supercritical fluid electrodeposition (SCFED) was employed for rapid deposition (2.5 mu m min(-1)) of tellurium nanowires (TeNW) of nominal size range 13 nm to 55 nm diameter and tens of micrometers in length. Anodic aluminium oxide (AAO) membranes were used as hard templates for the electrodeposition by evaporation of platinum or gold onto one face to form the electrode. TeNWs were characterised both in situ and after removal of the AAO template by XRD, Raman spectroscopy and electron microscopy. The nanowires were crystalline with a strong preferred orientation in all cases. The typical < 001 > growth direction was always observed for samples produced using platinum coated membranes; however for the gold coated membranes, a chemical reaction between the tellurium(IV) precursor and the gold led to atypical < 110 > growth. Transistor devices were fabricated from individual TeNWs and their electrical properties characterised.