Atomistic-Level Description of GaN/Water Interface by a Combined Spectroscopic and First-Principles Computational Approach
Atomistic-Level Description of GaN/Water Interface by a Combined Spectroscopic and First-Principles Computational Approach
复制标题
DOI:
10.1021/acs.jpcc.0c02192
复制
发表时间:
2020-05
影响因子:
3.7
通讯作者:
Masahiro Sato;Yuki Imazeki;T. Takeda;Masaki Kobayashi;S. Yamamoto;I. Matsuda;J. Yoshinobu;Y. Nakano;M. Sugiyama
中科院分区:
文献类型:
--
作者:
Masahiro Sato;Yuki Imazeki;T. Takeda;Masaki Kobayashi;S. Yamamoto;I. Matsuda;J. Yoshinobu;Y. Nakano;M. Sugiyama
Photocatalytic water splitting takes place at the semiconductor/electrolyte interface. Although the reactions are strongly affected by the subtle changes in the interface structure, little is known...