Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers
Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers
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DOI：
10.1109/ted.2005.862704
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发表时间：
2006-02-01
影响因子：
3.1
通讯作者：
Agarwal, A
中科院分区：
文献类型：
--
作者：
Zhu, L;Chow, TP;Agarwal, A
1-kV 4 H-SiC平面结势垒肖特基（JBS）整流器的设计，制造和表征。不同的p+注入剂量和激活退火方法被用来确定一个最佳的基线工艺。采用优化工艺，JBS整流器的正向压降< 1.5 V，反向漏电流密度< 1 × 10（-5）A/cm（-2）。使用单区结终端扩展终端实现了> 1 kV的阻断电压。实验表明，4 μ m的p型注入窗口间距给出了这些整流器的正向压降和漏电流密度之间的最佳折衷，产生3 m Ω中心点cm（2）的比导通电阻。
The 1-kV 4H-SiC planar junction barrier Schottky (JBS) rectifiers were designed, fabricated, and characterized. Different p+ implantation dosages and activation anneal methods were used to determine an optimum baseline process. Using the optimized process, the forward drop of our JBS rectifiers is < 1.5 V while the reverse leakage current density is < 1 X 10(-5) A/cm(-2). Blocking voltage > 1 kV was achieved using a single-zone junction termination extension termination. It was shown experimentally that 4-mu m p-type implantation window spacing gives an optimum tradeoff between forward drop voltage and leakage current density for these rectifiers, yielding a specific on-resistance of 3 m Omega center dot cm(2).