Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs
Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs
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DOI：
10.1109/tns.2005.860722
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发表时间：
2005-12
影响因子：
1.8
通讯作者：
J. Baggio;V. Ferlet-Cavrois;D. Lambert;P. Paillet;Frédéric Wrobel;K. Hirose;H. Saito;E. W. Blackmore
中科院分区：
文献类型：
--
作者：
J. Baggio;V. Ferlet-Cavrois;D. Lambert;P. Paillet;Frédéric Wrobel;K. Hirose;H. Saito;E. W. Blackmore
研究了0.2 /spl μ l /m全贫硅绝缘体（FD-SOI）器件在14-500 MeV大能量范围内对质子和中子辐照的SEU敏感性。与具有相似栅极长度的散装器件的比较显示，在存在体连接的情况下，其性能提高了50倍。通过蒙特卡罗模拟验证了FD-SOI的低灵敏度主要是由于灵敏度体积减小所致。这些结果被外推到十纳米技术，以预测先进SOI过程的行为。我们发现，完全耗尽的设备对地面辐射环境的敏感性远远低于部分耗尽的技术。
The SEU sensitivity of 0.2 /spl mu/m fully depleted silicon on ensulator (FD-SOI) devices to proton and neutron irradiations is investigated in a large energy range (14-500 MeV). The comparison to bulk devices with similar gate lengths shows an improvement of a factor of 50 with the presence of body ties. Monte Carlo simulations were performed to confirm that the low sensitivity of FD-SOI is mainly due to the reduced sensitive volume. These results were extrapolated to deca-nanometric technologies to predict the behavior of advanced SOI processes. We found that fully depleted devices will be far less sensitive than partially depleted technologies to the terrestrial radiative environment.