Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer
Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer
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DOI：
10.1016/j.mee.2004.01.005
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发表时间：
2004-05
影响因子：
2.3
通讯作者：
T. Hattori;T. Yoshida;T. Shiraishi;Kensuke Takahashi;H. Nohira;S. Joumori;K. Nakajima;Motofumi Suzuki-Mot
中科院分区：
文献类型：
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作者：
T. Hattori;T. Yoshida;T. Shiraishi;Kensuke Takahashi;H. Nohira;S. Joumori;K. Nakajima;Motofumi Suzuki-Mot
