AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
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DOI：
10.1063/1.4828497
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发表时间：
2013-10-28
影响因子：
4
通讯作者：
Razeghi, M.
中科院分区：
文献类型：
--
作者：
Cicek, E.;McClintock, R.;Razeghi, M.
报道了在Si(111)衬底上生长的AlxGa1-xN基日盲紫外光探测器。首先对Si(111)衬底进行图案化，然后通过脉冲原子层外延生长技术实现了类似于8.5µm AlN模板层的完全结合的金属有机化学气相沉积。随后在高质量AlN模板层上生长背照明的p-i-nPd结构。在实现了Si(111)衬底的去除工艺后，研究了PDS的光电特性。在290 nm的峰值检测波长下，625微米(2)面积的Pd显示出接近7%和18.3 mA/W的无偏峰值外量子效率和响应度，紫外光和可见光抑制比超过三个数量级。电学测量表明，在10V反向偏压下，低暗电流密度低于1.6×10~(-8)A/cm~(2)。(C)2013 AIP出版有限责任公司。
We report on AlxGa1-xN-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced similar to 8.5 mu m AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 mu m(2) area PD showed unbiased peak external quantum efficiency and responsivity of similar to 7% and 18.3mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 x 10(-8) A/cm(2) at 10V reverse bias. (C) 2013 AIP Publishing LLC.