Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET's
Random Berry phase magnetoresistance as a probe of interface roughness in Si MOSFET's
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DOI：
10.1103/physrevb.64.235325
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发表时间：
2000-08
影响因子：
3.7
通讯作者：
H. Mathur;H. Baranger
中科院分区：
文献类型：
--
作者：
H. Mathur;H. Baranger
本文研究了硅-氧化物界面粗糙度对硅MOSFET在相对于界面倾斜的磁场中弱局域化磁导的影响。它表明，电子拿起一个随机的贝瑞的相位，因为它穿越一个封闭的轨道。实际上，由于粗糙度，电子将平行于界面的均匀场视为随机垂直场。在零平行场下，电导对垂直场的依赖关系有一个众所周知的形式，即弱局域化线形。在这里，施加一个固定的平行场上的线形的效果进行了分析。许多类型的行为被发现，包括均匀加宽，非均匀加宽和显着的制度，其中的线形的变化只取决于磁场，两个长度尺度的界面粗糙度和基本常数的特征。在均匀加宽极限的实验，得到了良好的协议。讨论了惠勒及其同事提出的用弱局部化磁导作为界面粗糙度探针的意义。
The effect of silicon-oxide interface roughness on the weak-localization magnetoconductance of a silicon MOSFET in a magnetic field, tilted with respect to the interface, is studied. It is shown that an electron picks up a random Berry's phase as it traverses a closed orbit. Effectively, due to roughness, the electron sees an uniform field parallel to the interface as a random perpendicular field. At zero parallel field the dependence of the conductance on the perpendicular field has a well known form, the weak-localization lineshape. Here the effect of applying a fixed parallel field on the lineshape is analyzed. Many types of behavior are found including homogeneous broadening, inhomogeneous broadening and a remarkable regime in which the change in lineshape depends only on the magnetic field, the two length scales that characterize the interface roughness and fundamental constants. Good agreement is obtained with experiments that are in the homogeneous broadening limit. The implications for using weak-localization magnetoconductance as a probe of interface roughness, as proposed by Wheeler and coworkers, are discussed.