GaAsBi: From Molecular Beam Epitaxy Growth to Devices
GaAsBi: From Molecular Beam Epitaxy Growth to Devices
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GaAsBi：从分子束外延生长到器件
DOI：
10.1002/pssb.202100330
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Richards R
中科院分区：
文献类型：
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作者：
Richards R
砷化镓铋作为光电子器件的候选材料已经研究了大约二十年。双诱导局域态通过带反交相互作用诱导价带边快速上升，这对带隙和自旋轨道分裂有深远的影响。即使只有百分之几的铋，也可以使GaAsBi成为太赫兹发射器，电信激光器和低噪声光电探测器等设备的有吸引力的材料。在其中一些领域取得了重大进展；然而，GaAsBi的许多潜在应用的进展一直受到器件质量问题的阻碍，器件质量问题是由于生长具有足够大Bi分数的GaAsBi所需的低衬底温度所带来的。这篇综述概述了GaAsBi所倡导的应用以及这些领域的主要成果。然后探讨了GaAsBi的分子束外延生长和后处理，以及提出的提高材料质量的新技术。
GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.
III-V 族半导体中的太赫兹发射机制：等电子掺杂剂的影响
DOI：
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发表时间：
2020
期刊：
影响因子：
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作者：
R. Kini;C. Vaisakh
通讯作者：
C. Vaisakh