A scanning tunneling microscope using dual‐axes inchworms for the observation of a cleaved semiconductor surface
A scanning tunneling microscope using dual‐axes inchworms for the observation of a cleaved semiconductor surface
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使用双轴尺蠖观察劈裂半导体表面的扫描隧道显微镜
DOI：
10.1116/1.585392
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
S. Ohkouchi
中科院分区：
文献类型：
--
作者：
Takashi Kato;F. Osaka;I. Tanaka;S. Ohkouchi
我们已经构建了一个新的扫描隧道显微镜（STM），使用x和z尺蠖在微真空环境中的微定位。一个（z尺蠖）用于使尖端接近样品表面，另一个（x尺蠖）用于切割样品并将样品移动到感兴趣的位置。我们已经证明，这种STM是非常有用的观察薄外延层的横截面，如解理（110）表面的Ga 0.47In 0.53As/InP多量子阱（MQW）结构。GaInAs阱层和InP势垒层的STM图像反映了MQW势的特征。此外，我们还获得了GaInAs和InP层中V族阴离子的填充态图像。
We have constructed a new scanning tunneling microscope (STM) that uses x and z inchworms for micropositioning in an ultrahigh vacuum environment. One (z inchworm) is for approaching the tip to the sample surface and the other (x inchworm) is for both cleaving the sample and moving the sample to positions of interest. We have demonstrated that this STM is very useful for observing the cross section of a thin epitaxial layer, such as the cleaved (110) surface of a Ga0.47In0.53As/InP multiquantum well (MQW) structure. The STM image of GaInAs well layers and InP barrier layers has been shown to reflect the feature of the MQW potential. Moreover, we have obtained images of the filled states on the group‐V anions in the GaInAs and InP layers.