Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors
Self-Aligned Top-Gate Coplanar In-Ga-Zn-O Thin-Film Transistors
复制标题
DOI：
10.1109/jdt.2009.2026189
复制
发表时间：
2009-12-01
影响因子：
--
通讯作者：
Wu, Chung-Chih
中科院分区：
文献类型：
--
作者：
Wu, Cheng-Han;Hsieh, Hsing-Hung;Wu, Chung-Chih
自对准技术由于其诸多优点而被广泛应用于传统的CMOS和硅基薄膜晶体管（TFT）技术中。在本文中，我们报告了自对准共面顶栅InGaZnO TFT使用PECVD a-SiNx：H图案化，具有低的氢含量在沟道区和高的氢含量在源/漏区。在退火以诱导氢从a-SiNx：H扩散到氧化物半导体中之后，源极-漏极区域变得更导电，而沟道区域仍然适合于TFT操作，从而产生工作自对准TFT结构。这样的制造既不涉及背面曝光也不涉及离子注入，因此可以与典型的和成本有效的TFT制造兼容。
Self-aligned techniques are often used in conventional CMOS and Si-based thin-film transistors (TFTs) technologies due to various merits. In this paper, we report self-aligned coplanar top-gate InGaZnO TFTs using PECVD a-SiNx : H patterned to have low hydrogen content in the channel region and high hydrogen content in the source/drain region. After annealing to induce hydrogen diffusion from a-SiNx : H into the oxide semiconductor, the source-drain regions become more conductive and yet the channel region remains suitable for TFT operation, yielding a working self-aligned TFT structure. Such fabrication involves neither back-side exposure nor ion implantation, and thus may be compatible with the typical and cost-effective TFT manufacturing.