DMSO modified PEDOT: PSS polymer/ZnO nanorods Schottky junction ultraviolet photodetector: Photoresponse, external quantum efficiency, detectivity, and responsivity augmentation using N doped graphene quantum dots
DMSO modified PEDOT: PSS polymer/ZnO nanorods Schottky junction ultraviolet photodetector: Photoresponse, external quantum efficiency, detectivity, and responsivity augmentation using N doped graphene quantum dots
复制标题
DOI：
10.1016/j.orgel.2017.11.024
复制
发表时间：
2018-02-01
影响因子：
3.2
通讯作者：
Mondal, Suvra Prakash
中科院分区：
文献类型：
--
作者：
Dhar, Saurab;Majumder, Tanmoy;Mondal, Suvra Prakash
通过在水热生长的氧化锌纳米棒阵列上旋涂空穴导电聚合物聚3，4-乙二氧基噻吩聚苯乙烯磺酸盐(PEDOT：PSS)，制备了肖特基结紫外光探测器。通过添加二甲基亚砜(DMSO)来提高PEDOT：PSS聚合物的电导率，从而改善了光电探测器的性能。通过N掺杂石墨烯量子点(NGQD)敏化氧化锌纳米棒，进一步提高了紫外探测器的性能。NQD修饰的氧化锌NRS/DMSO-PEDOT：PSS肖特基结器件在340 nm波长和-1V外偏压下表现出良好的外量子效率(EQE类似于90063%)、响应度(R波长类似于247A/W)和探测率(D波长类似于2.42×10(11)HZ(1/2)/W)。NGQD改性样品的EQE是未修饰PEDOT：PSS/ZnO NR的56倍，是DMSO改性PEDOT：PSS/ZnO NRS器件的4.3倍。NGQD敏化探测器在340 nm波长、-1V外偏压下的光电流为80.77 mA/cm2，是DMSO修饰器件的2倍和原始PEDOT：PSS器件的32倍。与其他光电探测器相比，NGQD敏化NRS的光电流上升和衰减时间都非常快。
Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT: PSS) on hydrothermally grown zinc oxide (ZnO) nanorod array. The photodetector performance was improved by increasing the conductivity of PEDOT: PSS polymer using dimethyl sulfoxide (DMSO) additive. The UV detector performance was further enhanced significantly by sensitizing ZnO nanorods with N doped graphene quantum dots (NGQDs). NGQD decorated ZnO NRs/DMSO-PEDOT: PSS Schottky junction device demonstrated superior external quantum efficiency (EQE similar to 90063%), responsivity (R-lambda similar to 247 A/W) and detectivity (D-lambda similar to 2.42 x 10(11) Hz(1/2)/W) at 340 nm wavelength and -1V external bias. The EQE of NGQD modified sample was 56 times higher than pristine PEDOT: PSS/ ZnO NR and 4.3 times higher than DMSO modified PEDOT: PSS/ZnO NRs device. NGQD sensitized detector showed superior photocurrent of 80.77 mA/cm(2) at 340 nm wavelength, -1V external bias, which was 2 times higher than DMSO modified and 32 times higher than pristine PEDOT: PSS based device. The photocurrent rise and decay time of NGQD sensitized NRs are very fast compared to other photodetectors.