Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories
Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories
复制标题
硅基量子点电子带电状态的表征及其在浮栅存储器中的应用
DOI:
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发表时间:
2006
期刊:
影响因子:
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通讯作者:
K.Makihara
中科院分区:
文献类型:
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作者:
S.Miyazaki;M.Ikeda;K.Makihara