The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis
The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis
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DOI：
10.1007/s10854-009-9896-1
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发表时间：
2010-03
期刊：
影响因子：
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通讯作者：
S. O’Leary;B. Foutz;M. Shur;L. Eastman
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文献类型：
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作者：
S. O’Leary;B. Foutz;M. Shur;L. Eastman
使用一个半经典的三谷蒙特卡罗模拟方法，我们分析了稳态和瞬态电子输运发生在散装纤锌矿InN使用一组修订的材料参数，这组修订的参数考虑到最近观察到的InN现象。特别是，我们研究如何在响应于晶体温度和掺杂浓度的变化，在体纤锌矿InN内发生的稳态和瞬态电子输运的变化。这些结果的非抛物线系数的变化的敏感性也进行了检查。
Using a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk wurtzite InN using a revised set of material parameters, this revised set of parameters taking into account recently observed InN phenomenology. In particular, we examine how the steady-state and transient electron transport that occurs within bulk wurtzite InN changes in response to variations in the crystal temperature and the doping concentration. The sensitivity of these results to variations in the non-parabolicity coefficient is also examined.