Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe
Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe
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DOI：
10.1021/acsphotonics.3c00052
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发表时间：
2022-10
期刊：
影响因子：
7
通讯作者：
Weijun Luo;A. Puretzky;B. Lawrie;Qishuo Tan;Hongze Gao;Zhuofa Chen;A. Sergienko;A. Swan;L. Liang;X. Ling
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文献类型：
--
作者：
Weijun Luo;A. Puretzky;B. Lawrie;Qishuo Tan;Hongze Gao;Zhuofa Chen;A. Sergienko;A. Swan;L. Liang;X. Ling
纳米应变已成为控制原子薄过渡金属二卤化物(TMDCs)(1，2)中单光子发射体(SPE)的有力工具。然而，单层TMDDC中的量子发射体在环境条件下通常是不稳定的。多层二维(2D)TMDCs可以作为解决方案，但它们的量子效率较低，导致SPE的亮度较低。在这里，我们报道了应变诱导的多层GaS中的单光子发射体的确定的空间局域化。应变控制的量子限制效应引入了孤立的亚带隙光致发光，并相应地抑制了宽带边光致发光。从3.5Kelvin的量子点状GaS亚带隙激子发射中观察到了明显的光子反聚束行为。与应变相关的限制势与亮度之间存在很强的相关性，这为SPE的调谐和控制提供了一条很有前途的途径。应变工程气体固相外延的全面研究为发展量子光子技术的二维器件提供了坚实的基础。
Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.