Wafer-Scale Growth of Vertical-Structured SnSe2 Nanosheets for Highly Sensitive, Fast-Response UV-Vis-NIR Broadband Photodetectors
Wafer-Scale Growth of Vertical-Structured SnSe2 Nanosheets for Highly Sensitive, Fast-Response UV-Vis-NIR Broadband Photodetectors
复制标题
DOI：
10.1002/adom.202102250
复制
发表时间：
2021-12-22
影响因子：
9
通讯作者：
Chen, Ming
中科院分区：
文献类型：
--
作者：
Chen, Zhiyong;Xiong, Lei;Chen, Ming
二维半导体薄膜具有很强的光-物质相互作用，在高性能紫外-可见-近红外（UV-Vis-NIR）宽带光电探测器（pd）的开发中显示出巨大的潜力。然而，通过传统的生长方法得到的平面二维半导体薄膜往往是孤立的片状和/或光的吸收效率低，这阻碍了UV-Vis-NIR光电子学的广泛应用。本文报道了基于片级垂直结构的SnSe2纳米片阵列（NSAs），通过低温分子束外延方法制备的高性能非平面紫外-可见-近红外宽带PD阵列。垂直结构的SnSe2 NSAs在340 ~ 650 nm波长范围内的光吸收效率为bb0 ~ 90%。得益于片级SnSe2 NSAs优异的光捕获能力和均匀性以及相对较短的通道，宽带PD阵列表现出优越的综合性能。它们具有31.94 a W-1的高响应度，快速（接近63 μ s）和高均匀性。此外，通过锌掺杂技术进一步提高了宽带PD阵列的响应性。
Owing to the strong light-matter interactions, 2D semiconducting thin films have shown their great potential in the development of high-performance ultraviolet-visible-near infrared (UV-Vis-NIR) broadband photodetectors (PDs). However, the planar 2D semiconducting thin films via conventional growth method are often in the form of isolated flakes and/or suffering from low absorption efficiency of light, which hinders the UV-Vis-NIR optoelectronics from widespread applications. Herein are reported high-performance nonplanar UV-Vis-NIR broadband PD arrays, based on wafer-scale, vertical-structured SnSe2 nanosheet arrays (NSAs) via low-temperature molecular beam epitaxy method. The vertical-structured SnSe2 NSAs possess light absorption efficiency of >90% covering the wave range from 340 to 650 nm. Benefiting from the excellent light trapping ability and uniformity of waferscaled SnSe2 NSAs as well as relatively short channel, the broadband PD arrays exhibit superior comprehensive performance. They achieve a high responsivity of 31.94 A W-1, fast speed (approximate to 63 mu s), and high uniformity. In addition, the responsivity of the broadband PD arrays is further improved via Zn-doping technique.