Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature
Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature
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DOI：
10.1063/1.1710709
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发表时间：
2004-04-19
影响因子：
4
通讯作者：
Hiramoto, T
中科院分区：
文献类型：
--
作者：
Saitoh, M;Hiramoto, T
本文首次在室温下观察到了在单孔晶体管（SHT）的超小硅点中由于量子限制而产生的扩展库仑阻塞（CB）区。我们制作单点SHTs的形式的金属氧化物半导体场效应晶体管具有非常狭窄的通道。在所制造的器件中，在RT下观察到具有40.4的峰谷电流比（PVCR）的大CB振荡和具有11.8的PVCR（有史以来最高的）的明确的负微分电导（NDC）。所观察到的NDC是由于共振隧穿由于在超小点的大小估计为约2 nm的大的量子级间距。(C)2004年，美国物理学会。
First room-temperature (RT) observation of extended Coulomb blockade (CB) region due to quantum confinement in the ultrasmall silicon dot in a single-hole transistor (SHT) is described. We fabricate single-dot SHTs in the form of metal-oxide-semiconductor field-effect transistors with an extremely constricted channel. Both large CB oscillation with the peak-to-valley current ratio (PVCR) of 40.4 and clear negative differential conductance (NDC) with the PVCR of 11.8 (highest ever reported) are observed at RT in the fabricated device. The observed NDC is attributable to the resonant tunneling due to the large quantum level spacing in the ultrasmall dot whose size is estimated to be about 2 nm. (C) 2004 American Institute of Physics.