Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode
Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode
复制标题
一种新型内嵌P型肖特基势垒二极管的无回弹反向导通SOI-LIGBT的仿真研究
DOI：
10.1109/ted.2020.2982615
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发表时间：
2020-05-01
影响因子：
3.1
通讯作者：
Xiang, Yong
中科院分区：
文献类型：
--
作者：
Yi, Bo;Lin, Jia;Xiang, Yong
In this article, a novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed. The two diodes are connected in series through a floating electrode, which provides a current path for carriers in reverse-conducting mode. Compared with the Separated Shorted-Anode RCLIGBT (SSA-RC-LIGBT), the proposed structure not only eliminates the snapback voltage (<inline-formula> <tex-math notation="LaTeX">$\Delta {V}_{\text {SB}}$ </tex-math></inline-formula>) but also avoids the waste of device area. Therefore, the superior reverse recovery characteristics and excellent tradeoff relationship between ON-state voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula>) and turn-off loss (<inline-formula> <tex-math notation="LaTeX">${E}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula>) are obtained. The reverse recovery charge of the proposed RC-LIGBT shows 43.9% and 63.2% reduction compared with those of the SSA-RC-LIGBT with <inline-formula> <tex-math notation="LaTeX">${L}_{\text {B}}$ </tex-math></inline-formula>(distance between the p<sup>+</sup> collector and the shorted n<sup>+</sup> collector) being 34 and <inline-formula> <tex-math notation="LaTeX">$64~\mu \text{m}$ </tex-math></inline-formula>, respectively. The turn-off loss of the proposed RC-LIGBT at <inline-formula> <tex-math notation="LaTeX">${V}_{ \mathrm{\scriptscriptstyle ON}} = {2.6}$ </tex-math></inline-formula> V is reduced by 68.2% and 87.1% compared with those of the SSA-RC-LIGBT with <inline-formula> <tex-math notation="LaTeX">$\sf \Delta {V}_{\text {SB}} = {0.48}$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$\sf \Delta {V}_{\text {SB}} = {0.17}$ </tex-math></inline-formula> V, respectively. Moreover, the proposed RC-LIGBT has a self-adjusted collector injection efficiency under different temperatures to dramatically improve the Short Circuit Safe Operation Area (SCSOA).
In this article, a novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed. The two diodes are connected in series through a floating electrode, which provides a current path for carriers in reverse-conducting mode. Compared with the Separated Shorted-Anode RCLIGBT (SSA-RC-LIGBT), the proposed structure not only eliminates the snapback voltage (<inline-formula> <tex-math notation="LaTeX">$\Delta {V}_{\text {SB}}$ </tex-math></inline-formula>) but also avoids the waste of device area. Therefore, the superior reverse recovery characteristics and excellent tradeoff relationship between ON-state voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula>) and turn-off loss (<inline-formula> <tex-math notation="LaTeX">${E}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula>) are obtained. The reverse recovery charge of the proposed RC-LIGBT shows 43.9% and 63.2% reduction compared with those of the SSA-RC-LIGBT with <inline-formula> <tex-math notation="LaTeX">${L}_{\text {B}}$ </tex-math></inline-formula>(distance between the p<sup>+</sup> collector and the shorted n<sup>+</sup> collector) being 34 and <inline-formula> <tex-math notation="LaTeX">$64~\mu \text{m}$ </tex-math></inline-formula>, respectively. The turn-off loss of the proposed RC-LIGBT at <inline-formula> <tex-math notation="LaTeX">${V}_{ \mathrm{\scriptscriptstyle ON}} = {2.6}$ </tex-math></inline-formula> V is reduced by 68.2% and 87.1% compared with those of the SSA-RC-LIGBT with <inline-formula> <tex-math notation="LaTeX">$\sf \Delta {V}_{\text {SB}} = {0.48}$ </tex-math></inline-formula> V and <inline-formula> <tex-math notation="LaTeX">$\sf \Delta {V}_{\text {SB}} = {0.17}$ </tex-math></inline-formula> V, respectively. Moreover, the proposed RC-LIGBT has a self-adjusted collector injection efficiency under different temperatures to dramatically improve the Short Circuit Safe Operation Area (SCSOA).