On the role of ions in the formation of cubic boron nitride films by ion-assisted deposition
On the role of ions in the formation of cubic boron nitride films by ion-assisted deposition
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DOI：
10.1557/jmr.1994.2925
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发表时间：
1994-11
影响因子：
2.7
通讯作者：
P. Mirkarimi;K. Mccarty;D. Medlin;W. G. Wolfer;T. Friedmann;E. Klaus;G. Cardinale;D. G. Howitt
中科院分区：
文献类型：
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作者：
P. Mirkarimi;K. Mccarty;D. Medlin;W. G. Wolfer;T. Friedmann;E. Klaus;G. Cardinale;D. G. Howitt
我们研究了离子辐照如何选择性地促进在类石墨 sp ^2 键合相上形成致密的 sp ^3 键合立方氮化硼 ( c BN)。我们使用离子辅助脉冲激光沉积进行了一系列实验，其中离子质量 (m_ion) 或离子能量 (E) 随离子通量与沉积原子通量之比 (J/a) 的变化而变化。对于固定的离子能量和质量，存在一个临界 J/a，高于该临界 J/a 就开始形成 c BN，获得大 c BN 百分比的 J/a 值窗口，以及 J/a 如此大以至于重溅射和沉积速率平衡且不存在净膜沉积的点，这与 Kester 和 Messier 的观点一致。与 Kester 和 Messier 一样，我们发现 c BN 的形成是由随离子动量变化的实验参数组合控制的。然而，与 Kester 和 Messier 不同的是，我们没有发现 c BN 的形成与在单次二元碰撞中可以传递的最大动量成比例，无论是 Targove 和 Macleod 错误地表述并被 Kester 和 Messier 使用，还是正确表述。相反，我们观察到 c BN 的形成与入射离子的总动量 ( m _ion E )_1/2 成最佳比例。我们还考虑了这种 ( m _ion E )_1/2 依赖性的机械起源。离子与氮化硼相互作用的计算机模拟表明，立方氮化硼的形成不能简单地用参数来衡量，例如原子位移数或离子辐照产生的空位数。对文献的严格审查表明，所提出的模型都不能令人满意地解释观察到的 ( m _ion E )_1/2 依赖性。我们提出了一个定量模型来描述离子辅助薄膜生长过程中应力的产生。该模型采用动态方法来分析缺陷的产生和损失。我们将模型的简化版本应用于 c BN 合成，发现它预测了 c BN 形成的近似 ( m _ion E )_1/2 依赖性。
We have investigated how ion irradiation can selectively promote the formation of dense sp ^3-bonded cubic boron nitride ( c BN) over the graphite-like sp ^2-bonded phases. We have conducted a series of experiments using ion-assisted pulsed laser deposition in which either the ion mass (m_ion) or ion energy ( E ) was varied in conjunction with the ratio of ion flux to depositing atom flux ( J/a ). For a fixed ion energy and mass, there is a critical J/a above which c BN formation is initiated, a window of J/a values in which large c BN percentages are obtained, and a point at which J/a is so large that the resputter and deposition rates balance and there is no net film deposition, in agreement with Kester and Messier. As do Kester and Messier, we find that c BN formation is controlled by a combination of experimental parameters that scale with the momentum of the ions. However, unlike Kester and Messier, we do not find that c BN formation scales with the maximum momentum that can be transferred in a single binary collision, as either incorrectly formulated by Targove and Macleod and used by Kester and Messier, or as correctly formulated. Instead we observe that c BN formation best scales with the total momentum of the incident ions, ( m _ion E )_1/2. We also consider the mechanistic origins of this ( m _ion E )_1/2 dependence. Computer simulations of the interaction of ions with BN show that c BN formation cannot be simply scaled to parameters such as the number of atomic displacements or the number of vacancies produced by the ion irradiation. A critical examination of the literature shows that none of the proposed models satisfactorily accounts for the observed ( m _ion E )_1/2 dependence. We present a quantitative model that describes the generation of stress during ion-assisted film growth. The model invokes a kinetic approach to defect production and loss. We apply a simplified version of the model to c BN synthesis, and find that it predicts an approximate ( m _ion E )_1/2 dependence for c BN formation.