150-nm generation lithography equipment
150-nm generation lithography equipment
复制标题
150纳米一代光刻设备
DOI：
--
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
S. Uzawa
中科院分区：
文献类型：
--
作者：
N. Deguchi;S. Uzawa
通过步进扫描曝光的光刻预计将成为180 nm以下分辨率图案的半导体制造的主流。我们已经开发了一种扫描仪，用于200 mm或300 mm晶圆上的150 nm特征。该系统对同步工作台系统进行了重新设计，提高了成像性能和叠对精度。新的300 mm晶圆载物台提高了生产率，同时重量几乎与200 mm晶圆载物台相同。主体机械框架结合了反作用力接收器系统，以对抗与高速晶片和掩模版台扫描相关的惯性能量和振动问题。本报告概述了为150 nm一代光刻机开发的Cannon FPA-5000 ES 2步进扫描曝光工具的总体系统设计、新技术和性能数据。
Lithography by step-and-scan exposure is expected to be the mainstream for semiconductor manufacturing below 180 nm resolution patterns. We have developed a scanner for 150 nm features on either 200 mm or 300 mm wafers. For this system, the synchronous stage system has been redesigned which makes it possible to improve imaging performance and overlay accuracy. A new 300 mm wafer stage enhances productivity while weighting almost the same as the stage for 200 mm wafers. The mainbody mechanical frame incorporates reactive force receiver system to counter the inertial energy and vibrational issues associated with high speed wafer and reticle stage scanning. This report outlines the total system design, new technologies and performance data of the Cannon FPA-5000ES2 step-and-scan exposure tool developed for the 150 nm generation lithography.