Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift
Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift
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DOI：
10.1063/1.365563
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发表时间：
1997-05
影响因子：
3.2
通讯作者：
I. Lyubomirsky;M. Rabinal;D. Cahen
中科院分区：
文献类型：
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作者：
I. Lyubomirsky;M. Rabinal;D. Cahen
我们展示了瞬态离子漂移（TID）方法，该方法基于记录恒定反向偏压下的结电容[A. Zamouche、T. Heiser 和 A. Mesli，Appl。物理。莱特。 66, 631 (1995)]，不仅可用于测量移动杂质的扩散系数，还可用于估计作为总掺杂剂密度一部分的移动物质的浓度。这以被 Cu 污染并有意掺杂 Li 或 Ag 的 CdTe 以及 CuInSe2 为例。我们还表明，在一些限制下，如果移动离子是主要掺杂剂，则可以使用 TID 方法。使用 CdTe 上的肖特基势垒以及 (Hg,Cd)Te 和 CuInSe2 中的 p-n 结器件证明了这一点。我们获得的扩散系数值（CdTe 中的 Li、Ag 和 Cu 以及 CuInSe2 中的 Cu）与文献中报道的通过其他方法获得的测量值或外推值非常吻合。此外，我们可以区分掺杂剂的扩散和化学反应，正如所证明的......
We show that the transient ion drift (TID) method, which is based on recording junction capacitance under constant reverse bias [A. Zamouche, T. Heiser, and A. Mesli, Appl. Phys. Lett. 66, 631 (1995)], can be used not only for measurements of the diffusion coefficient of mobile impurities, but also to estimate the concentration of mobile species as part of the total dopant density. This is illustrated for CdTe, contaminated by Cu, and intentionally doped by Li or Ag and for CuInSe2. We show also that, with some restrictions, the TID method can be used if the mobile ions are major dopants. This is demonstrated using Schottky barriers on CdTe, and p–n junction devices in (Hg,Cd)Te, and CuInSe2. The values that we obtain for the diffusion coefficients (for Li, Ag, and Cu in CdTe and for Cu in CuInSe2) agree well with measured or extrapolated values, obtained by other methods, as reported in the literature. Furthermore, we could distinguish between diffusion and chemical reactions of dopants, as demonstrated ...