Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP
Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP
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低温分子束外延In0.52Al0.48As/InP中载流子的亚皮秒光响应
DOI：
10.1063/1.103347
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
G. Mourou
中科院分区：
文献类型：
--
作者：
S. Gupta;P. Bhattacharya;J. Pamulapati;G. Mourou
用分子束外延法在（100）InP衬底上生长了In0.52Al0.48As，生长温度从150°C到480°C，对其进行了飞秒时间分辨反射率和光导开关测量。在150°C生长的样品中测量到响应/开关时间为~ 400 fs。温度相关的测量揭示了产生超快响应的材料的性质。
Femtosecond time‐resolved reflectivity and photoconductive switching measurements have been made of In0.52Al0.48As grown by molecular beam epitaxy on (100) InP substrates at growth temperatures ranging from 150 to 480 °C. A response/switching time of ∼400 fs is measured in the sample grown at 150 °C. Temperature‐dependent measurements shed light on the nature of the material producing the ultrafast response.