ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS : STRUCTURAL ANALYSIS AND RECRYSTALLIZATION
ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS : STRUCTURAL ANALYSIS AND RECRYSTALLIZATION
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DOI：
10.1063/1.361514
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发表时间：
1996-05
影响因子：
3.2
通讯作者：
C. Serre;L. Calvo‐Barrio;A. Pérez‐Rodríguez;A. Romano-Rodríguez;J. Morante;Y. Pacaud;R. Kögler;V. Heera;W. Skorupa
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文献类型：
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作者：
C. Serre;L. Calvo‐Barrio;A. Pérez‐Rodríguez;A. Romano-Rodríguez;J. Morante;Y. Pacaud;R. Kögler;V. Heera;W. Skorupa
通过红外和拉曼散射光谱、透射电子显微镜、卢瑟福背散射和 X 射线光电子能谱 (XPS) 对通过碳离子注入非晶硅（通过 Ge 离子注入预非晶化）获得的 SiC 薄膜进行了分析。获得的数据显示，通过连续的Ge和C注入，在非晶Si层的顶部形成了非晶Si1-xCx层。 XPS 光谱的拟合表明，除了 Si-Si 和 C-C 键之外，注入区域还存在约 70% 的 Si-C 键，其组成范围为 0.35<x<0.6。这表明在完美混合和完整化学顺序的情况之间，层中存在部分化学顺序。这些层的再结晶是通过离子束诱导外延结晶 (IBIEC) 实现的，从而产生纳米晶 SiC 层。然而，再结晶并不完全，观察到非晶态中仍然存在 Si-Si 和 C-C 键...
The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x‐ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35<x<0.6. This points out the existence of a partial chemical order in the layer, in between the cases of perfect mixing and complete chemical order. Recrystallization of the layers has been achieved by ion‐beam induced epitaxial crystallization (IBIEC), which gives rise to a nanocrystalline SiC layer. However, recrystallization is not complete, observing still the presence of Si–Si and C–C bonds in an amorphou...