Mapping of local stress distributions in SiGe/Si optical channel waveguide
Mapping of local stress distributions in SiGe/Si optical channel waveguide
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SiGe/Si 光通道波导中局部应力分布的映射
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
B. Weiss
中科院分区：
文献类型：
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作者：
H. Rho;H. Jackson;B. Weiss
通过微拉曼散射实验研究了SiGe/Si光弹性光通道波导结构。在 SiGe/Si 平面波导上制作 Si3N4 应力源条，以在条带下方产生局部应力变化。为了表征形成通道波导结构的局部应力分布，我们利用空间分辨拉曼光谱获得了 SiGe 层中的 Si-Si 拉曼峰位移，该拉曼光谱既来自横跨 Si3N4 条带宽度的顶面，也来自条带下方的边缘（即波导区域）。从顶面观察到的纵向光学声子位移显示，对于在 600°C 下退火的样品，条带宽度内的压应力和条带边缘外侧的拉应力显着增加。为了绘制条带下方波导区域应力的局部变化，从边缘测量两个横向光学声子的光谱，并使用拉曼偏振选择规则进行解释。 Si-Si Rama...
Micro-Raman scattering experiments have been carried out to study a SiGe/Si photoelastic optical channel waveguide structure. A Si3N4 stressor stripe was fabricated on a SiGe/Si planar waveguide to create local stress variation beneath the stripe. To characterize the local stress distributions which create the channel waveguide structure, we obtained Si–Si Raman peak shifts in the SiGe layer by utilizing spatially resolved Raman spectra both from the top surface across the width of the Si3N4 stripe and from an edge (i.e., a waveguiding region) beneath the stripe. Longitudinal optical phonon shifts observed from the top surface show a significant increase in compressive stress within the stripe width and in tensile stress just outside of stripe edges for a sample annealed at 600 °C. To map local changes of stresses in the waveguiding region beneath the stripe, spectra from two transverse optical phonons were measured from the edge and interpreted using the Raman polarization selection rules. The Si–Si Rama...