RE (RE = Sm, Eu, Gd)‐doped CeO2 single buffer layers for coated conductors prepared by chemical solution deposition
RE (RE = Sm, Eu, Gd)‐doped CeO2 single buffer layers for coated conductors prepared by chemical solution deposition
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DOI：
10.1002/pssa.200823636
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发表时间：
2009-07
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通讯作者：
R. Sun;M. Pu;Guo Li;Wentao Wang;M. Pan;Hong Zhang;M. Lei;Wei Wu;Xin Zhang;Ye Yang;Yong Zhang;Yong Zhao
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文献类型：
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作者：
R. Sun;M. Pu;Guo Li;Wentao Wang;M. Pan;Hong Zhang;M. Lei;Wei Wu;Xin Zhang;Ye Yang;Yong Zhang;Yong Zhao
通过聚合物辅助化学溶液沉积 (PACSD) 方法制备了用于涂覆导体的织构 RE (RE = Sm、Eu、Gd) 掺杂 CeO2 单缓冲层。通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 以及原子力显微镜 (AFM) 对双向织构 NiW(5%) 合金带上生长的缓冲层进行了表征。这些缓冲层的厚度已确定超过 150 nm，其上沉积的 YBCO 薄膜的起始转变温度高于 90 K，临界电流密度为 1 MA cm–2。这些结果表明稀土掺杂可以增加 CeO2 的临界厚度，PACSD 可能是一种经济有效的沉积 CeO2 的方法。 （© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Textured RE (RE = Sm, Eu, Gd)‐doped CeO2 single buffer layers for coated conductors were prepared by a polymer assisted chemical solution deposition (PACSD) approach. The as‐grown buffer layers on biaxially textured NiW(5%) alloy tapes were characterized by X‐ray diffraction (XRD) and scanning electron microscopy (SEM) as well as atomic force microscopy (AFM). The thicknesses of these buffer layers have been determined to be over 150 nm, on which a YBCO film has been deposited with an onset transition temperature above 90 K and a critical current density of 1 MA cm–2. These results indicate that RE doping can increase the critical thickness of CeO2 and PACSD may be a cost‐effective way to deposit CeO2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)