Monolithic quantum-dot distributed feedback laser array on silicon
Monolithic quantum-dot distributed feedback laser array on silicon
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DOI：
10.1364/optica.5.000528
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发表时间：
2018-05-20
期刊：
影响因子：
10.4
通讯作者：
Yu, Siyuan
中科院分区：
文献类型：
--
作者：
Wang, Yi;Chen, Siming;Yu, Siyuan
直接生长在硅上的电泵浦激光器是硅微电子学和光子学的关键接口器件。我们在这里报告，为第一次，尽我们所知，电泵浦，室温，连续波（CW）和单模分布反馈激光器阵列制造的InAs/GaAs量子点增益材料外延生长在硅上。CW阈值电流低至12 mA和单模边模抑制比高达50 dB已实现从阵列中的各个设备。该激光器阵列与最先进的粗波分复用（CWDM）系统兼容，具有20 +/- 0.2 nm的良好对准的信道间隔，并显示出覆盖100 nm范围的记录波长，O波段的整个跨度。这些结果表明，据我们所知，硅上外延生长的激光器的性能第一次被提升到接近现实世界的CWDM应用的水平，证明了这项技术的巨大潜力。由The Optical Society根据Creative Commons Attribution 4.0 License条款发布。
Electrically pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, to the best of our knowledge, an electrically pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback laser array fabricated in InAs/GaAs quantum-dot gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20 +/- 0.2 nm and exhibits a record wavelength covering range of 100 nm, the full span of the O-band. These results indicate that, for the first time, to the best of our knowledge, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.