Valence band mixing in GaAs/AlGaAs quantum wells adjacent to self-assembled InAlAs antidots
Valence band mixing in GaAs/AlGaAs quantum wells adjacent to self-assembled InAlAs antidots
复制标题
邻近自组装 InAlAs 解点的 GaAs/AlGaAs 量子阱中的价带混合
DOI：
10.1155/2019/5349291
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发表时间：
2019
影响因子：
--
通讯作者：
Takuya Kawazu
中科院分区：
文献类型：
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作者：
H. Tanaka;K. Tanaka;R. Matsumoto;and S. Kishida;Takuya Kawazu
研究了 InAlAs 量子点 (QD) 附近的 GaAs/AlGaAs 量子阱 (QW) 的光学特性，并与理论模型进行比较，以阐明 QD 应变如何影响附近 QW 中的电子态。 In0.4Al0.6As量子点嵌入在量子线的顶部； QD 层充当应变源和能量势垒。光致发光激发（PLE）测量表明，QD 的形成导致轻空穴（lh）和重空穴（hh）的 PLE 强度比 Ie-lh/Ie-h 增加，表明价带混合的存在。我们还从理论上计算了由于附近 QD 应变而导致的 QW 中的 hh-lh 混合，并评估了 PLE 比率 Ie-lh/Ie-hh。
Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratioIe-lh/Ie-hhof the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh‐lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratioIe-lh/Ie-hh.