A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation
A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation
复制标题
一种通过注入锗降低4H-碳化硅接触电阻的技术
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
R. Messham
中科院分区：
文献类型：
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作者：
G. Katulka;K. Roe;J. Kolodzey;C. Swann;G. Desalvo;R. C. Clarke;G. Eldridge;R. Messham
报道了注入Ge对镍金属触点对n型和p型4H-SiC电阻的影响。以346 keV的能量和1.7×1016 cm−2的剂量注入锗，将晶片退火至1700℃，加热30 min。采用传递长度法（TLM）在n型和p型4H-SiC蚀刻平台上进行了接触电阻的测量，并在有无Ge的情况下进行了测量。对于退火的ni金属触点，Ge使n型SiC的比接触电阻率从5.3×10−4 Ωcm2降低到6.0×10−5 Ωcm2， p型SiC的比接触电阻率从1.2×10−3 Ωcm2降低到8.3×10−5 Ωcm2。对于沉积（未退火）的Ni， Ge产生欧姆触点，而没有Ge的触点则产生整流。这些结果表明，在sic器件应用中，添加Ge是降低接触电阻的重要工艺步骤。
The effects of implanted Ge on the resistance of nickel-metal contacts to n-type and p-type 4H-SiC are reported. The Ge was implanted with an energy of 346 keV and a dose of 1.7×1016 cm−2, and the wafer was annealed up to 1700°C for 30 min. Contact resistance measurements using the transfer length method (TLM) were performed on etched mesas of n-type and p-type 4H-SiC, with and without the Ge. For the annealed-Ni metal contacts, the Ge lowered the specific contact resistivity from 5.3×10−4 Ωcm2 to 6.0×10−5 Ωcm2 for n-type SiC and from 1.2×10−3 Ωcm2 to 8.3×10−5 Ωcm2 for p-type SiC. For the as-deposited (unannealed) Ni, the Ge produced ohmic contacts, whereas the contacts without Ge were rectifying. These results suggest that the addition of Ge can be an important process step to reduce the contact resistance for SiC-device applications.