Experimentally demonstrate a cathode short MOS-controlled thyristor (CS-MCT) for single or repetitive pulse applications
Experimentally demonstrate a cathode short MOS-controlled thyristor (CS-MCT) for single or repetitive pulse applications
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DOI：
10.1109/ispsd.2016.7520840
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发表时间：
2016-06
期刊：
影响因子：
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通讯作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Hongquan Liu;Qi Zhou;Zhaoji Li;Bo Zhang
中科院分区：
文献类型：
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作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Hongquan Liu;Qi Zhou;Zhaoji Li;Bo Zhang
本文提出并制作了一种用于脉冲电源的阴极短路MOS控制晶闸管(CS-MCT)。CS-MCT不同于传统的MCT(CON-MCT)，它具有阴极短路结构，在栅地(VG=0V)形成空穴电流的提取路径，并具有正常关断特性。在导通状态的电流导通过程中，所提出的CSMCT的PNPN结构提供了再生作用，从而实现了超低导通电阻。实验结果表明，在VG=0时，CS-MCT单次击穿电压大于1600V，峰值电流(I峰)为2.4kA，电流上升速率(di/dt)为12.5kA/μS，而Con-MCT的单次击穿电压为600V，峰值电流为2.2kA，电流上升速率为11.8kA/μS。此外，在重复频率为10 Hz时得到了良好的连续脉冲波形，表明所提出的CS-MCT适用于重复脉冲应用。实验证明，CS-MCT具有优异的脉冲性能和常断特性，有望在单脉冲或重复脉冲应用中替代CON-MCT。
In this paper, a cathode-short MOS-controlled thyristor (CS-MCT) is proposed and fabricated for pulse power application. The CS-MCT is distinguished from conventional MCT (CON-MCT) with a cathode-short structure, which forms an extracting path for hole current at gate-ground (Vg=0 V) and brings about a normally-off characteristic. During the conduction of current in the on-state, the PNPN structure of proposed CSMCT provides a regeneration action bringing about an ultralow on-resistance. The experiment results show the proposed CS-MCT exhibits a breakdown voltage of more than 1600 V at Vg=0, a peak current (Ipeak) of 2.4 kA and current rise rate (di/dt) of 12.5 kA/μs at a single shot, compared with 600 V, 2.2 kA and 11.8 kA/μs for CON-MCT, respectively. In addition, a favorable continuous pulse waveform is presented at frequency repetition of 10 Hz indicating the proposed CS-MCT is suitable for repetitive pulse application. The superior pulse performances and normally-off characteristic experimentally demonstrated make it promising for CS-MCT to be an alternative to CON-MCT in single or repetitive pulse applications.