Design and Characterization of New Content Addressable Memory Cells
Design and Characterization of New Content Addressable Memory Cells
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新内容可寻址存储单元的设计和表征
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
A. Stabile
中科院分区：
文献类型：
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作者：
A. Annovi;L. Frontini;V. Liberali;A. Stabile
本文提出了一种新的内容可寻址存储器(CAM)单元，设计成两种变体(反相和非反相)，并针对功耗进行了优化。这些单元采用28 nm的cmos工艺设计，采用全cmos方法。如果字中的一个位不匹配，则相应的单元向级联单元发送“KILL”信号以阻止进一步的切换。多亏了这一特性，所设计的CAM阵列每次比较只需不到0.7fJ/位。已经制作了一个包含217个字的原型，每个字18位，并已被证明是可行的。
This paper presents a new Content Addressable Memory (CAM) cell, designed in two variants (inverting and non-inverting), and optimized for power consumption. The cells are designed in 28 nm CMOS technology, using a fully-CMOS approach. If one of the bits in a word is not matching, the corresponding cell sends a "kill" signal to the cascaded cell to inhibit further switching. Thanks to this feature, the designed CAM array requires less than 0.7 fJ/bit per comparison. A prototype containing 217 words of 18 bits each has been fabricated and it has proven to be functional.