The use of parasitic nonlinear capacitors in class E amplifiers
The use of parasitic nonlinear capacitors in class E amplifiers
复制标题
寄生非线性电容器在E类放大器中的使用
DOI：
10.1109/81.340867
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发表时间：
1994
影响因子：
5.1
通讯作者：
M. J. Chudobiak
中科院分区：
文献类型：
--
作者：
M. J. Chudobiak
最常见的E类放大器配置使用单个晶体管、并联电容和串联谐振输出滤波器。到目前为止，一直假定并联电容为线性。然而，为了实现在900 MHz及以上的操作，感兴趣的是仅依赖于晶体管的非线性寄生集电极-衬底电容。在这封信中的工作在50%的占空比和非线性电容的分析理论，并对放大器的功率容量的影响进行了讨论。>
The most common class E amplifier configuration uses a single transistor with a shunt capacitor and a series resonant output filter. Until now a linear shunt capacitance has been assumed. However, to achieve operation at 900 MHz and above, it is of interest to rely solely upon the nonlinear parasitic collector-substrate capacitance of the transistor. An analytical theory for operation at 50% duty cycle and nonlinear capacitance is presented in this correspondence, and the effects on the power capability of the amplifier are discussed. >