A study of the material loss and other processes involved during annealing of GaN at growth temperatures
A study of the material loss and other processes involved during annealing of GaN at growth temperatures
复制标题
DOI：
10.1016/j.cplett.2003.09.019
复制
发表时间：
2003-10
影响因子：
2.8
通讯作者：
M. A. Rana;T. Osipowicz;Hoi Wai Choi;M. Breese;S. Chua
中科院分区：
文献类型：
--
作者：
M. A. Rana;T. Osipowicz;Hoi Wai Choi;M. Breese;S. Chua
