Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction?
Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction?
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硅表面上电迁移引起的台阶聚束——它如何取决于温度和加热电流方向？
DOI：
10.1143/jjap.30.1
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发表时间：
1991
影响因子：
1.5
通讯作者：
S. Stoyanov
中科院分区：
文献类型：
--
作者：
S. Stoyanov
最近报道的数据的影响的加热电流的方向上的Si表面的微观形貌进行了分析的基础上的假设，Si吸附原子的电迁移。结果合理地解释了在（111）Si表面观察到的台阶聚束现象，这种现象发生在中温或高温，取决于加热电流的方向（阶跃上升或阶跃下降）。与实验数据的对抗导致Si吸附原子的负有效电荷。本文还解释了低温退火下（001）Si邻面上主畴和次畴的形成。作用在Si原子上的力估计为0.8×10 ~（-16）N，如果吸附原子的有效电荷等于基元电荷，则可由5V/cm的电场产生。
Recently reported data for an influence of the heating current direction on the micromorphology of Si surfaces have been analyzed on the basis of the hypothesis for electromigration of Si adatoms. The results provide a reasonable explanation of the observed step bunching on the (111) Si surface, which occurs either at moderate or at high temperature depending on the direction (step up or step down) of the heating current. The confrontation with the experimental data results in a negative effective charge of the Si adatoms. The formation of major and minor domains on (001) Si vicinal surfaces under low temperature annealing is also interpreted in accordance with the obtained theoretical results. The force acting on the Si adatoms is estimated to be 0.8×10-16 N and can be created by an electric field of 5 V/cm if the effective charge of an adatom is equal to the elementary electric charge.