Positron Annihilation in Semiconductors
Positron Annihilation in Semiconductors
复制标题
DOI：
10.1007/978-3-662-03893-2
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
R. Krause-Rehberg;H. Leipner
中科院分区：
文献类型：
--
作者：
R. Krause-Rehberg;H. Leipner
这本书的主题是用正电子湮没的方法研究半导体中的晶格缺陷。本文综述了正电子技术在各种缺陷中的应用，如空位、杂质-空位复合体、位错等。将正电子湮没检测缺陷的灵敏度范围与其他缺陷敏感方法的灵敏度范围进行了比较。回顾了正电子在几乎所有重要半导体中所取得的最显著的结果。书中有一章专门论述了正电子湮没作为一种很有前途的工具，可用于许多技术目的。详细解释了理解实验结果所需的理论背景。
The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, eg vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.