Exciton and biexciton luminescence from single hexagonal GaN∕AlN self-assembled quantum dots
Exciton and biexciton luminescence from single hexagonal GaN∕AlN self-assembled quantum dots
复制标题
DOI：
10.1063/1.1769586
复制
发表时间：
2004-06
影响因子：
4
通讯作者：
S. Kako;K. Hoshino;S. Iwamoto;S. Ishida;Y. Arakawa
中科院分区：
文献类型：
--
作者：
S. Kako;K. Hoshino;S. Iwamoto;S. Ishida;Y. Arakawa
我们报道了用金属有机化学气相沉积法生长的六方GaN ScinAlN自组装量子点的单点光谱。通过使用亚微米梅萨结构减少量子点的数目，我们获得了由单个量子点发射的多个孤立的光致发光峰。随着激发功率的增加，在激子基态的较高能量侧出现额外的峰。这个额外的峰显示二次幂依赖性，并归因于从双激子态的光致发光。双激子的结合能为负，大小约为30meV，这是由强内建电场的作用所解释的.
We report single dot spectroscopy of hexagonal GaN∕AlN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Through the reduction of the number of quantum dots using submicron mesa structures, we have obtained several isolated photoluminescence peaks emitted by individual quantum dots. With increasing excitation power, an additional peak emerges in the higher-energy side of an excitonic ground state. This additional peak shows quadratic power dependence, and is attributed to the photoluminescence from a biexciton state. The biexciton binding energy is negative and the magnitude is about 30meV, which is explained by the effects of a strong built-in electric field.