Total Ionizing Dose (TID) of Phase Change Random Access Memory
Total Ionizing Dose (TID) of Phase Change Random Access Memory
复制标题
相变随机存取存储器的总电离剂量 (TID)
DOI：
10.1109/icreed52909.2021.9588721
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Yudong Li
中科院分区：
文献类型：
--
作者：
Xing;Qi Guo;Dong Zhou;Yudong Li
采用60Co γ射线和电子束对相变存储器（PCRAM）进行辐照，并在辐照后采用不同温度进行退火处理。用超大规模集成电路测试仪测试了直流参数和功能。器件在辐射中失效，部分直流参数作为辐射敏感参数发生变化。通过对辐照敏感参数的分析，探讨了PCRAM的总电离剂量（TID）失效机理和退火特性。从读干扰错误、写干扰错误、编程干扰错误和存储单元开路故障四个方面解释器件功能失效的原因。氧化层陷阱电荷和界面陷阱是导致这些缺陷的主要原因。
Phase Change Random Access Memory (PCRAM) were irradiated by 60Co γ-rays and electron beam, and used different temperature to anneal after irradiation. The DC parameters and function were tested by very large scale integrated (VLSI) circuit tester. The function of device was failure in radiation, and some DC parameters as radiation-sensitive parameters were changed. Total ionizing dose (TID) failure mechanism and annealing characteristics of PCRAM were discussed by analyzing radiation-sensitive parameters. Function failure of device would be explained through four reasons, which were read interference error, write error, program interference error and open fault for memory cell. Oxide trapped charge and interface trap were those faults cause.