Kelvin Probe Force Microscopy by Dissipative Electrostatic Force Modulation
Kelvin Probe Force Microscopy by Dissipative Electrostatic Force Modulation
复制标题
通过耗散静电力调制进行开尔文探针力显微镜
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
P. Grutter
中科院分区：
文献类型：
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作者：
Y. Miyahara;J. Topple;Z. Schumacher;P. Grutter
报道了一种利用频率调制原子力显微镜的耗散信号作为偏压反馈的开尔文探针力显微镜（KPFM）实验技术。它具有简单的实现和更快的扫描，因为它不需要低频调制。耗散是由与尖端振荡相干的振荡静电力引起的，所述尖端振荡由施加在尖端和样品之间的正弦振荡电压引起。我们分析了振荡力的相位对频移和耗散的影响，发现仅引起耗散的相对相位为90 ° C时，KPFM测量是最合适的。由于共振增强和使用基本弯曲模式振荡用于静电力检测，本技术凭借增强的力检测需要显著更小的ac电压幅度。这一特点将是非常重要的技术相关材料的电气特性，其电气性能的影响，如在半导体电子器件的情况下，由外部施加的电场。
We report a new experimental technique for Kelvin probe force microscopy (KPFM) using the dissipation signal of frequency modulation atomic force microscopy for bias voltage feedback. It features a simple implementation and faster scanning as it requires no low frequency modulation. The dissipation is caused by the oscillating electrostatic force that is coherent with the tip oscillation, which is induced by a sinusoidally oscillating voltage applied between the tip and sample. We analyzed the effect of the phase of the oscillating force on the frequency shift and dissipation and found that the relative phase of 90$^circ$ that causes only the dissipation is the most appropriate for KPFM measurements. The present technique requires a significantly smaller ac voltage amplitude by virtue of enhanced force detection due to the resonance enhancement and the use of fundamental flexural mode oscillation for electrostatic force detection. This feature will be of great importance in the electrical characterizations of technically relevant materials whose electrical properties are influenced by the externally applied electric field as is the case in semiconductor electronic devices.