INPLANE ALIGNED YBA2CU3O7-X THIN-FILMS DEPOSITED ON POLYCRYSTALLINE METALLIC SUBSTRATES
INPLANE ALIGNED YBA2CU3O7-X THIN-FILMS DEPOSITED ON POLYCRYSTALLINE METALLIC SUBSTRATES
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DOI：
10.1063/1.106514
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发表时间：
1992-02-10
影响因子：
4
通讯作者：
IKENO, Y
中科院分区：
文献类型：
--
作者：
IIJIMA, Y;TANABE, N;IKENO, Y
c轴取向的YBa2Cu3O7-x薄膜通常在多晶衬底上制备，但a轴和b轴是随机分布的。由于A -b面高角度晶界处存在薄弱环节，临界电流密度（J(c)）较低，在10(3)~ 10(4)A/cm2 （77 K, 0 T）之间，且J(c)随磁场的减小与yba2cu3o7 -x块体样品相似。为了减少高角度晶界处的薄弱环节，采用离子束辅助沉积（IBAD）方法在多晶镍基合金上形成双轴取向的钇稳定氧化锆（YSZ）缓冲层，然后采用激光烧蚀法沉积a-b平面排列的yba2cu3o7 -x薄膜。J(c)为2.5 × 10(5) A/cm2 （77 K, 0 T）和2.2 × 10(4) A/cm2 （77 K, 8.0 T）。一种防止晶间薄弱环节的新方法已经开发出来，在实际多晶衬底上具有潜在的应用前景。
C-axis oriented YBa2Cu3O7-x thin films are conventionally obtained on polycrystalline substrates, but a- and b-axes are randomly distributed. Due to the weak links at the high-angle grain boundaries in the a-b plane, the critical current density (J(c)) are comparatively low, from 10(3) to 10(4) A/cm2 (77 K, 0 T), and the J(c) decreases in magnetic field in a manner similar to bulk YBa2Cu3 O7-x samples. To reduce weak links at the high-angle grain boundaries, biaxially oriented buffer layers of yttria stabilized zirconia (YSZ) were formed on polycrystalline, Ni-based alloy by ion-beam assisted deposition (IBAD), and subsequently the a-b plane aligned YBa2Cu3 O7-x filM was deposited by laser ablation. J(c) of 2.5 X 10(5) A/cm2 (77 K, 0 T) and 2.2 x 10(4) A/cm2 (77 K, 8.0 T) were obtained. A new method to prevent intergranular weak links has been developed for potential applications using practical polycrystalline substrates.