Asymmetric LOCO Codes: Constrained Codes for Flash Memories
Asymmetric LOCO Codes: Constrained Codes for Flash Memories
复制标题
非对称 LOCO 码:闪存的约束码
DOI:
10.1109/allerton.2019.8919932
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发表时间:
2019
期刊:
影响因子:
--
通讯作者:
Calderbank, Robert
中科院分区:
文献类型:
--
作者:
Hareedy, Ahmed;Calderbank, Robert
In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that have insufficient separation between consecutive transitions exacerbate inter-symbol interference. Constrained codes are used to eliminate such error-prone patterns. A recent example is a new family of capacity-achieving constrained codes, named lexicographically-ordered constrained codes (LOCO codes). LOCO codes are symmetric, that is, the set of forbidden patterns is closed under taking pattern complements. LOCO codes are suboptimal in terms of rate when used in Flash devices where block erasure is employed since the complement of an error-prone pattern is not detrimental in these devices. This paper introduces asymmetric LOCO codes (A-LOCO codes), which are lexicographically-ordered constrained codes that forbid only those patterns that are detrimental for Flash performance. A-LOCO codes are also capacity-achieving, and at finite-lengths, they offer higher rates than the available state-of-the-art constrained codes designed for the same goal. The mapping-demapping between the index and the codeword in A-LOCO codes allows low-complexity encoding and decoding algorithms that are simpler than their LOCO counterparts.
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影响因子:
2.5
作者:
Ahmed Hareedy;R. Wu;L. Dolecek
通讯作者:
Ahmed Hareedy;R. Wu;L. Dolecek
DOI:
10.1109/18.623139
发表时间:
1997
期刊:
IEEE Trans. Inf. Theory
影响因子:
--
作者:
Kees A. Schouhamer Immink
通讯作者:
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DOI:
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发表时间:
1970-12
期刊:
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影响因子:
--
作者:
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通讯作者:
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DOI:
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发表时间:
1998-10
期刊:
IEEE Trans. Inf. Theory
影响因子:
--
作者:
Kees A. Schouhamer Immink;P. Siegel;J. Wolf
通讯作者:
Kees A. Schouhamer Immink;P. Siegel;J. Wolf
影响因子:
2.1
作者:
P. Siegel
通讯作者:
P. Siegel