A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
复制标题
用于检测 MOS 场效应晶体管中太赫兹辐射的通用数值模型
DOI：
10.1016/j.sse.2010.03.009
复制
发表时间：
2010-08-01
影响因子：
1.7
通讯作者：
Chan, Mansun
中科院分区：
文献类型：
--
作者：
Wang, Yinglei;Yan, Zhifeng;Chan, Mansun
建立了一个适用于金属氧化物半导体场效应晶体管（MOS FETs）探测太赫兹辐射的通用数值模型，该模型在强反型区和亚阈值区都有效。将一般的载流子密度方程和栅漏电流耦合到MOS场效应晶体管二维沟道电子输运的基本流体力学方程，得到数值解，计算了MOSFET的太赫兹光响应信号。仿真结果与已有的解析结果进行了比较，证明了所提出的数值模型的有效性，克服了解析理论的局限性。(C)2010爱思唯尔有限公司保留所有权利。
A generic numerical model which is valid both in the strong inversion regime and sub-threshold regime for the detection of terahertz radiation utilizing Metal-Oxide-Semiconductor (MOS) Field-Effect Transistors (FETs) is developed in this paper. A general carrier density equation and gate leakage current are coupled to the basic hydrodynamic equations which govern the electron transport in the 2D channel of the MOS field-effect transistor to obtain the numerical solution; a progress-based photo-response signal of the terahertz radiation of MOSFET is calculated. The simulation results are compared with existing analytical results, proving the validity of the proposed numerical model and overcoming limitations of the analytical theories. (C) 2010 Elsevier Ltd. All rights reserved.