The effects of Na and some additives on nitrogen dissolution in the Ga-Na system: A growth mechanism of GaN in the Na flux method
The effects of Na and some additives on nitrogen dissolution in the Ga-Na system: A growth mechanism of GaN in the Na flux method
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DOI：
10.1007/s10854-005-4955-8
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发表时间：
2005-01-01
影响因子：
2.8
通讯作者：
Sasaki, T
中科院分区：
文献类型：
--
作者：
Kawamura, F;Morishita, M;Sasaki, T
在用Na助熔剂法生长GaN单晶中，我们成功地阐明了在900 K以上的Ga-Na熔体系统中，Na对氮的溶解起到了促进作用。在高温Ga-Na熔体的气液界面上，Na起着电离氮气的作用。氮气的电离导致熔体中氮的溶解急剧增加。因此，这些材料很容易合成GaN单晶。另一方面，在Ga-Na熔体中加入少量的Ca或Li也增加了氮的溶解。然而，添加剂的作用是保持Ga-Na熔体中溶解的氮，从而导致氮浓度的急剧增加。在本研究中，我们报道了GaN在Ga-Na系统中的溶解度和氮气生长GaN的阈值压力。在这些数据的基础上，我们提出了GaN的生长机制和添加剂对维持氮的作用。(C)2005年Springer Science+Business Media，Inc.
In the growth of GaN single crystal using the Na flux method, we succeeded in clarifying the role of Na in promoting nitrogen dissolution in the Ga-Na melt system above 900 K. At the gas-liquid interface of high temperature Ga-Na melt, Na functions to ionize the nitrogen gas. The ionization of the nitrogen gas results in drastic increase of nitrogen dissolution in the melt. In consequence, these synthesize GaN single crystals easily. On the other hand, the addition of a minor amount of Ca or Li to the Ga-Na melt system also increases the nitrogen dissolution. However, the additives function to maintain the nitrogen dissolved in the Ga-Na melt, which results in drastic increase in the nitrogen concentration. In the present study, we report the solubility of GaN in the Ga-Na system and the threshold pressure of nitrogen gas to grow GaN. On the basis of these data, we propose a growth mechanism of GaN and the role of additives to maintain nitrogen. (C) 2005 Springer Science + Business Media, Inc.