Site-Selective Quantum Control in an Isotopically Enriched Si28/Si0.7Ge0.3 Quadruple Quantum Dot
Site-Selective Quantum Control in an Isotopically Enriched
Si28/Si0.7Ge0.3
Quadruple Quantum Dot
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同位素富集 Si28/Si0.7Ge0.3 四重量子点中的位点选择性量子控制
DOI：
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发表时间：
2019
影响因子：
4.6
通讯作者：
J. Petta
中科院分区：
文献类型：
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作者：
A. Sigillito;J. Loy;David Zajac;M. Gullans;Lisa F. Edge;J. Petta
硅自旋量子比特是一种很有前途的量子计算平台，提供长的相干时间，小的设备尺寸，并与工业支持的设备制造技术兼容。近年来，高保真单量子比特和双量子比特操作已经在Si中得到证实。在这里，我们证明了相干自旋控制在四重量子点制造使用同位素富集28 Si。我们将四点的基态电荷配置调整到单电子状态，并展示了高达20 GHz的可调点间隧道耦合，这使得基于交换的双量子位门操作成为可能。在磁场梯度中，利用电偶极自旋共振实现了位置选择性单自旋旋转。我们在270 ns内在两个相邻自旋之间执行谐振CNOT门。
Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here, we demonstrate coherent spin control in a quadruple quantum dot fabricated using isotopically enriched 28Si. We tune the ground state charge configuration of the quadruple dot down to the single electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved using electric dipole spin resonance in a magnetic field gradient. We execute a resonant-CNOT gate between two adjacent spins in 270 ns.