Chemical-Assisted Mechanical Polishing of Diamond Film on Wafer
Chemical-Assisted Mechanical Polishing of Diamond Film on Wafer
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DOI：
10.4028/www.scientific.net/msf.505-507.1225
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发表时间：
2006-01
期刊：
影响因子：
--
通讯作者：
H. Cheng;C.C. Chen
中科院分区：
文献类型：
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作者：
H. Cheng;C.C. Chen
金刚石是公认的战略工程材料。它具有优良的物理和化学性能，包括最高的硬度和导热系数，以及良好的耐化学侵蚀性。CVD金刚石膜具有良好的潜在性能，但其厚度不均匀和表面粗糙度限制了其工业应用。本文采用化学辅助机械抛光法，采用不同的抛光液对CVD金刚石膜进行抛光。这些浆料含有强氧化化学品和金刚石粉末。在此过程中，金刚石膜被保持在旋转陶瓷板上，并在90 ° C或更低的温度下横向振荡。利用表面轮廓仪、原子力显微镜和扫描电镜对金刚石薄膜抛光前后的表面完整性进行了分析。基于实验结果，浆料含有过硫酸钾（K2S2O8）产生最高的材料去除率，而高锰酸钾（KMnO4）开发最好的局部表面粗糙度。采用过硫酸钾粗抛、高锰酸钾精抛的策略，可获得整体表面粗糙度最好的金刚石薄膜。所提出的技术产生的金刚石膜的平均表面粗糙度是低于10纳米后5小时。
Diamond has been well recognized a strategic engineering material. It possesses excellent physical and chemical properties including the highest hardness and thermal conductivity, and good resistance to chemical erosion. Although CVD diamond film has good potential outstanding properties, its industrial applications have been limited by the non-uniform thickness and rough surface. In the current study, the CVD diamond film is polished by the chemical-assisted mechanical method with different slurries. These slurries contain strong oxidation chemical and diamond powder. During the process, the diamond film was held against the rotational ceramic plate with transverse oscillation at 90 °Cor lower. The profilometer, atomic force microscope and scanning electron microscope were used to evaluate the surface integrity of the diamond films before and after polishing. Based on the experimental results, the slurry containing potassium persulfate (K2S2O8) produces the highest material removal rate while potassium permanganate (KMnO4) develops the best local surface roughness. The strategy of using potassium persulfate for coarse polishing followed by potassium permanganate for fine polishing yields the diamond films of the best global surface roughness. The average surface roughness of the diamond film produced by the proposed technique is below 10 nm after 5 hours.