Threshold behavior of photo-induced plasmon-resonant self oscillation in a new interdigitated grating gate HEMT device

Threshold behavior of photo-induced plasmon-resonant self oscillation in a new interdigitated grating gate HEMT device
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新型叉指光栅栅HEMT器件中光致等离子体共振自振荡的阈值行为

DOI:
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发表时间:
2007
期刊:
Japanese Journal of Applied Physics 46
影响因子:
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通讯作者:
M. Hanabe and E. Sano
M. Hanabe and E. Sano
中科院分区:
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文献类型:
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作者:
Y. M. Meziani;T. Otsuji;M. Hanabe and E. Sano

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