Roles of hydrogen and nitrogen in p-type doping of ZnO
Roles of hydrogen and nitrogen in p-type doping of ZnO
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DOI：
10.1016/j.cplett.2007.04.085
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发表时间：
2007-06-13
影响因子：
2.8
通讯作者：
Nishinaka, H.
中科院分区：
文献类型：
--
作者：
Lu, J. G.;Fujita, S.;Nishinaka, H.
采用常压喷雾化学气相沉积法制备了氮掺杂ZnO薄膜。系统研究了氢和氮杂质的行为，提出了氢辅助氮掺杂制备p型ZnO的机理。H和N浓度在生长样品中呈线性相关。p型导电性通过在N-2环境中的快速热退火实现，其中空穴浓度在475-500摄氏度下通常为10（17）cm（-3）。在这个温度窗口中，解离的氢表现出显着的外扩散，而氮仍然保持稳定的ZnO和表现为有效的受体，从而导致良好的p型导电性。(C)2007 Elsevier B. V.保留所有权利。
N-doped ZnO thin films were prepared by atmospheric pressure mist chemical vapor deposition. The behaviors of H and N impurities were systematically studied, and a hydrogen-assisted nitrogen-doping mechanism was proposed to produce p-type ZnO. The H and N concentrations showed a linear correlation in as-grown samples. The p-type conductivity was realized by rapid thermal annealing in N-2 environment, with the hole concentrations typically of 10(17) cm(-3) at 475-500 degrees C. In this temperature window the dissociated hydrogen showed significant outdiffusion, while the nitrogen still remained stable in ZnO and behaved as effective acceptors resulting in good p-type conductivity. (C) 2007 Elsevier B.V. All rights reserved.