Study of 1200 V SiC JFET cascode device
Study of 1200 V SiC JFET cascode device
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1200 V SiC JFET共源共栅器件的研究
DOI：
10.1109/wipda.2017.8170566
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Hui Li
中科院分区：
文献类型：
--
作者：
Ren Xie;Yanjun Shi;Hui Li
本文重点研究最近发布的 1200V SiC JFET 共源共栅器件。栅极驱动电路设计和开关性能与对应的 1200 V SiC MOSFET 进行了比较。研究发现SiC JFET共源共栅的栅极驱动电路设计与SiC MOSFET类似。此外，优化的栅极驱动器旨在最大限度地减少器件开关损耗，而不会引起“串扰”问题。提供DPT（单脉冲测试）和MPT（多脉冲测试）的实验结果来验证所提出的优化栅极驱动器并比较两种器件的开关性能。
This paper is focused on studying a 1200V SiC JFETs cascode device released recently. The gate drive circuit design and switching performance are compared with its counterpart, 1200 V SiC MOSFETs. The research finds out the gate drive circuit design of SiC JFETs cascode is similar to that of SiC MOSFETs. In addition, an optimized gate driver is designed to minimize the device switching loss without causing “crosstalk” issue. The experimental results of DPT (single pulse test) and MPT (multiple pulse test) are provided to verify the proposed optimized gate driver and compare the switching performance of two devices.