Highly ordered MnO2 nanowire array thin films on Ti/Si substrate as an electrode for electrochemical capacitor
Highly ordered MnO2 nanowire array thin films on Ti/Si substrate as an electrode for electrochemical capacitor
复制标题
DOI：
10.1016/j.jssc.2006.01.058
复制
发表时间：
2006-05
影响因子：
3.3
通讯作者：
Cailing Xu;Shu-juan Bao;L. Kong;Hua Li;Hu-lin Li
中科院分区：
文献类型：
--
作者：
Cailing Xu;Shu-juan Bao;L. Kong;Hua Li;Hu-lin Li
通过在Ti/Si衬底上对铝膜进行两步电化学阳极氧化，成功地合成了AAO/Ti/Si衬底，并将其作为模板生长纳米线阵列。采用直流电沉积法在AAO/Ti/Si衬底上直接制备了直径约为40 nm的有序二氧化锰纳米线阵列。采用场发射扫描电镜、透射电镜和x射线衍射对纳米线阵列的微观结构进行了研究。采用循环伏安法在0.5 M Na2SO4水溶液中进行了电化学表征。制备的二氧化锰纳米线在400℃前均为无定形，在200℃下热处理得到良好的电容性能，电极的比电容约为254 F/g
AAO/Ti/Si substrate was successfully synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow nanowire arrays. The ordered MnO2 nanowire arrays with about 40 nm diameters had been directly fabricated on AAO/Ti/Si substrate by direct current (DC) electrodeposition. The microstructure of the nanowire arrays was investigated by field-emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Their electrochemical characterization was performed using cyclic voltammetry in 0.5 M Na2SO4 aqueous solution. The synthesized MnO2 nanowires had amorphous nature until 400 deg. C. The deal capacitive behavior was obtained when the as-prepared sample was heat-treated at 200 deg. C. The specific capacitance of the electrode was about 254 F/g