Laser-induced down-conversion parameters of singly and doubly doped ZnS phosphors
Laser-induced down-conversion parameters of singly and doubly doped ZnS phosphors
复制标题
单、双掺杂 ZnS 荧光粉的激光诱导下转换参数
DOI：
10.1007/bf02704213
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
N. Verma
中科院分区：
文献类型：
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作者：
H. S. Bhatti;Rajesh Sharma;N. Verma
采用助熔剂法合成了单掺杂和双掺杂ZnS荧光粉。用脉冲紫外N_2激光激发掺ZnS荧光粉，观察到激光诱导荧光。由于下转换现象，在可见光区的快速磷光发射记录在毫秒时域的ZnS：Mn的情况下，而在ZnS：Mn：杀手（Fe，Co和Ni）的寿命减少到微秒时域。实验观察到的发光发射参数的激发态，如，寿命，陷阱深度值和衰减常数已在这里报道在室温下。在掺杂ZnS磷光体中观察到的高效率和快速复合时间使得这些材料对于光电应用非常有吸引力。
Singly and doubly doped ZnS phosphors have been synthesized using flux method. Laser-induced photoluminescence has been observed in ZnS-doped phosphors when these were excited by the pulsed UV N2 laser radiation. Due to down-conversion phenomenon, fast phosphorescence emission in the visible region is recorded in milliseconds time domain for ZnS:Mn while in the case of ZnS:Mn:killer (Fe, Co and Ni) the lifetime reduces to microseconds time domain. Experimentally observed luminescent emission parameters of excited states such as, lifetimes, trap-depth values and decay constants have been reported here at room temperature. The high efficiency and fast recombination times observed in doped ZnS phosphors make these materials very attractive for optoelectronic applications.