High-speed and highly efficient Si optical modulator with strained SiGe layer
High-speed and highly efficient Si optical modulator with strained SiGe layer
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DOI：
10.7567/apex.11.032201
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发表时间：
2018-03-01
影响因子：
2.3
通讯作者：
Takenaka, Mitsuru
中科院分区：
文献类型：
--
作者：
Fujikata, Junichi;Noguchi, Masataka;Takenaka, Mitsuru
通过将p型掺杂应变SiGe层叠加在侧向pn结型Si- mod上，开发了一种高速高效的pn结耗尽型Si光调制器（Si- mod）。我们设计了一种最优的Si-MOD，它是最有效的带pn结的Si-MOD之一，并在直流反向偏置电压分别为0.5和2v （dc）时，对V pi L进行了0.67和0.81V的高效率调制。我们还演示了Si-MOD在约1.3 μ m波长下的25 Gbps高速运行。(C) 2018
We developed a high- speed and highly efficient depletion-type Si optical modulator ( Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer, which was stacked on a lateral pn junction-type Si-MOD. We designed an optimum Si-MOD, which is one of the most efficient Si-MODs with a pn junction, and demonstrated highly efficient modulations of 0.67 and 0.81V center dot cm for V pi L at dc reverse bias voltages of-0.5 and-2V(dc), respectively. We also demonstrated a high-speed operation of 25 Gbps for the Si-MOD at a wavelength of around 1.3 mu m. (C) 2018 The Japan Society of Applied Physics