Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing
Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing
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DOI：
10.1116/1.4898117
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发表时间：
2014-10
期刊：
影响因子：
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通讯作者：
R. Yang;Xu-Qian Zheng;Zenghui Wang;Christopher J. Miller;P. Feng
中科院分区：
文献类型：
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作者：
R. Yang;Xu-Qian Zheng;Zenghui Wang;Christopher J. Miller;P. Feng
二硫化钼（MoS 2）二维纳米结构已被积极探索用于石墨烯以外的超小型晶体管。目前用于生产MoS 2器件的主流方法涉及多个湿化学步骤，其不仅耗时，而且还可能通过化学工艺不利地影响材料质量并损害器件性能。在这里，作者报告了第一个干转移原始二硫化钼场效应晶体管（FET），没有任何后转移光刻和化学工艺，通过使用一个简单的，完全干转移技术，具有高吞吐量和高精度的对准。作者还表明，器件的性能可以大大提高热退火。结合干转移技术与热退火，作者实现了MoS 2 FET的迁移率高达76 cm 2/（V s）和开/关比超过107。作者进一步展示了连续退火循环如何改善MoS 2器件的电导率，迁移率，开/关比，跨导比和电导率。
Molybdenum disulfide (MoS2) two-dimensional nanostructures have been actively explored for ultrasmall transistors beyond graphene. The current prevailing methods for producing MoS2 devices involve multiple wet chemistry steps, which not only are time consuming, but may also unfavorably affect material quality and impair device performance through the chemical processes. Here, the authors report the first dry-transferred pristine MoS2 field-effect transistors (FETs) without any post-transfer lithographical and chemical processes, by using a facile, completely dry transfer technique with high throughput and high precision in alignment. The authors also show that the device performance can be greatly boosted by thermal annealing. Combining the dry-transfer technique with thermal annealing, the authors achieve MoS2 FETs with mobility up to 76 cm2/(V s) and on/off ratios exceeding 107. The authors further show how continued annealing cycles improve the MoS2 devices' conductance, mobility, on/off ratio, transco...