Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties
Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties
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DOI：
10.1002/pssb.201451589
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发表时间：
2015-05-01
影响因子：
1.6
通讯作者：
Zuniga-Perez, Jesus
中科院分区：
文献类型：
--
作者：
Coulon, Pierre-Marie;Alloing, Blandine;Zuniga-Perez, Jesus
采用金属有机物气相外延连续流生长模式，在蓝宝石衬底GaN模板上，利用图案化SiN掩模，实现了GaN纳米线的原位可控生长。与用于GaN层生长的V/III比率相比，低V/III比率结合Ga和N前体两者的低前体流速，已用于促进Ga极性衬底上的纳米线生长。横向生长速率，即垂直于c轴，可以进一步控制使用适当的生长温度和H-2/N-2比。此外，图案的几何形状对纳米线的长径比和尺寸均匀性的影响已被解决。(C)2015 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
Site-controlled growth of GaN nanowires (NWs) on GaN-on-sapphire templates with a patterned SiN mask has been carried out by metalorganic vapor phase epitaxy using a continuous-flow growth mode. A low V/III ratio compared to that used for GaN layer growth, combined with low precursor flow rates for both Ga and N precursors, has been used to promote the nanowire growth on Ga-polar substrates. The lateral growth rate, that is, perpendicular to the c-axis, could be further controlled using appropriate growth temperatures and H-2/N-2 ratios. Besides, the influence of the pattern geometry on the nanowire aspect ratio and size homogeneity has been addressed. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim